MMFT2406T1 |
RFQ for MMFT2406T1 Required Field |
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| Technical/Catalog Information | MMFT2406T1 |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 240V |
| Current - Continuous Drain (Id) @ 25° C | 700mA |
| Rds On (Max) @ Id, Vgs | 6 Ohm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 125pF @ 25V |
| Power - Max | 1.5W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MMFT2406T1 MMFT2406T1 MMFT2406T1OSDKR ND MMFT2406T1OSDKRND MMFT2406T1OSDKR |
| Product | Manufacturers | Pack | D/C |
| MMFT2406T1 | - | SOT223 | 05+ |
This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.
Features |
| ` Silicon Gate for Fast Switching Speeds` High Voltage -240 Vdc` Low Drive Requirement` The SOT-223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die.` Pb-Free Packages are Available |
|
Rating |
Symbol |
Value |
Unit |
| Drain-to-Source Volta |
VDSS |
240 |
Volts |
| Gate-to-Source Voltage - Non -Repeti |
VGS |
±20 |
Volts |
| Drain Current |
ID |
700 |
mAdc |
| Total Power Dissipation @ TA = 25 (Note 1) Derate above 25 |
PD |
1.5 |
Watts |
| Operating and Storage Temperature Range |
TJ ,Tstg |
-65 to 150 |
